ZXM61P02F 20v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) i d t a = 25 c -20v 600m @ v gs = -4.5v -0.92a 900m @ v gs = -2.7v -0.75a description and applications this mosfet utilizes a unique structure that combines the benefits of low on-resistance with fast sw itching speed, making it ideal for high-efficiency power management applications. ? dc - dc converters ? power management functions ? disconnect switches ? motor control features and benefits ? fast switching speed ? low on-resistance ? low threshold ? low gate drive ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ; solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel ZXM61P02Fta p02 7 8 3000 units notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free. 2. diodes inc?s ?green? policy can be found on our website at http://www.twtysemi.com 3. for packaging details, go to our website at http://www.twtysemi.com marking information top view equivalent circuit p02 = product type marking code d s g top view pin out d s g sot23 p02 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
ZXM61P02F maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gs 12 v continuous drain current v gs = 4.5v t a = 25c (note 5) t a = 70c (note 5) i d -0.9 -0.7 a pulsed drain current (note 6) i dm -4.9 a continuous source current (body diode) (note 5) i s -0.9 a pulsed source current (body diode) (note 6) i sm -4.9 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) linear derating factor p d 625 5 mw mw/c power dissipation (note 5) linear derating factor p d 806 6.4 mw mw/c thermal resistance, junction to ambient (note 4) r ja 200 c/w thermal resistance, junction to ambient (note 5) r ja 155 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 4. for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air condi tions 5. for a device surface mounted on fr4 pcb measured at t 5 secs. 6. repetitive rating 25mm x 25 mm fr4 pcb, d=0.05 pulse width=10 s - pulse current limited by maximum junction temperature. product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
ZXM61P02F electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -20 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current i dss ? ? -0.1 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 12v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) -0.7 ? ? v i d = -250 a, v ds = v gs static drain-source on-resistance (note 7) r ds (on) ? ? 0.6 ? v gs = -4.5v, i d = -0.61a 0.9 v gs = -2.7v, i d = -0.31a forward transconductance (notes 7 and 9) g fs 0.56 ? ? s v ds = -10v, i d = -0.31a diode forward voltage (note 7) v sd ? ? -0.95 v t j = 25c, i s = -0.61a, v gs = 0v reverse recovery time (note 9) t r r ? 14.9 ? ns t j = 25c, i f = -0.61a, di/dt = 100a/ s reverse recovery charge (note 9) q r r ? 5.6 ? nc dynamic characteristics (note 9) input capacitance c iss ? 150 ? pf v ds = -15v, v gs = 0v f = 1.0mhz output capacitance c oss ? 70 ? reverse transfer capacitance c rss ? 30 ? turn-on delay time (note 8) t d ( on ) ? 2.9 ? ns v dd = -110v, i d = -0.93a, r g ? 6.2 , r d ? 11 , turn-on rise time (note 8) t r ? 6.7 ? turn-off delay time (note 8) t d ( off ) ? 11.2 ? turn-off fall time (note 8) t f ? 10.1 ? total gate charge (note 8) q g ? 3.5 ? nc v ds = -16v, v gs = -4.5v, i d = -0.61a gate-source charge (note 8) q g s ? 0.5 ? gate-drain charge (note 8) q g d ? 1.5 ? notes: 7. measured under pulsed conditions. pulse width = 300 s. duty cycle ? 2%. 8. switching characteristics are ind ependent of operating junction temperature. 9. for design aid only, not subject to production testing. product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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